Micro inertia sensor and method of manufacturing t

专利名称：Micro inertia sensor and method of

manufacturing the same

发明人：Seung Do An,Kyoung Soo Kim,Ji Man Cho申请号：US10735171申请日：20031212公开号：US06835588B2公开日：20041228

专利附图：

摘要：The present invention provides a micro inertia sensor and a method ofmanufacturing the same, the micro inertia sensor includes a lower glass substrate; alower silicon including a first border, a first fixed point and a side movement sensing

structure; an upper silicon including a second border, a second fixed point beingconnected to a via hole, in which a metal wiring is formed, on an upper side, and ansensing electrode, which correspond to the first border, the first fixed point and the sidemovement sensing structure; a bonded layer by a eutectic bonding between the uppersilicon and the lower silicon; and a upper glass substrate, being positioned on an upperportion of the upper silicon, for providing the via hole on which an electric conductionwiring is formed, thereby aiming at the miniaturization of the product and thesimplification of the process.

申请人：SAMSUNG ELECTRO-MECHANICS CO., LTD.

代理机构：Darby & Darby

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