■ Absolute Maximum Ratings Ta = 25℃Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Colletor Current - Pulse Base Current Collector Power Dissipation Junction Temperature Storage Temperature rangeSymbolVCBOVCEOVEBOICICPIBPCTJTstgRating-15-15-5-3-5-0.61.3150 -55 to 150W℃AVUnit■ Electrical Characteristics Ta = 25℃Parameter Collector- base breakdown voltage Collector- emitter breakdown voltage Emitter - base breakdown voltage Collector-base cut-off current Emitter cut-off current Collector-emitter saturation voltage Base - emitter saturation voltage DC current gain Turn-ON Time Storage Time Turn-OFF Time Collector output capacitance Transition frequencySymbolVCBOVCEOVEBOICBOIEBOTest Conditions Ic= -100 μA， IE=0 Ic= -1 mA，RBE= ∞ IE= -100μA， IC=0 VCB= -12 V , IE=0 VEB= -3V , IC=0-0.25-0.951005030 See specified Test Circuit.100120 VCB= -10V, IE= 0,f=1MHz VCE= -2V, IC= -0.3A2830060200220pFMHznsMin-15-15-5-1-1-0.5-1.2280uAVVTypMaxUnitVCE(sat) IC=-1.5A, IB=-75mAVBE(sat) IC=-1.5A, IB=-75mAhFEtontstgtoffCobfT VCE= -2V, IC= -500mA VCE= -2V, IC= -3A■ Classification of hfe(1)TypeRangeMarking2SA1898-R100-200ANR2SA1898-S140-280ANS2SA1898PNPTransistorsSwitching Time Test Circuit
Unit (resistance : Ω, capacitance : F)
■ Typical Characterisitics2SA1898PNPTransistors■ Typical Characterisitics
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